SiC single crystal growth by a modified physical vapor transport technique - Concepedia

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SiC single crystal growth by a modified physical vapor transport technique

39

Citations

6

References

2004

Year

Peter J. Wellmann, Patrick Desperrier, Ralf Müller, Thomas L. Straubinger, A. Winnacker, Francis Baillet, E. Blanquet, Jean Marc Dedulle, M. Pons

Journal of Crystal Growth

Materials ScienceEngineeringCrystal Growth TechnologyApplied PhysicsSemiconductor Device FabricationChemical Vapor DepositionCarbide

References

	Year	Citations

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