The electrical resistivity of some lattice defects in FCC metals observed in radiation damage experiments

Abstract

The electrical resistivity of 44 point defects, which occur in the annealing stages of fcc metals, are calculated using the real space formulation of the pseudopotential theory of resistivity recently derived by the author. The structures of the stable defects produced by irradiation have been taken from previous atomistic calculations and used in calculating the resistivities of various forms of the vacancy complex, Frenkel defect and interstitial. Special attention is paid to the effect of the relaxation of atoms around these defects and in the case of interstitials it is shown that a large fraction of the resistivity is caused by such relaxations.