IEEE Transactions on Microwave Theory and Techniques · 1989 · 18 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsGallium Nitride Microwave Integrated CircuitsInsertion LossMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsRise Time
Two different Ka-band single-pole, double-throw (SPDT) switch circuits using monolithic GaAs epitaxial p-i-n diode technology are presented. The lowest insertion loss is 0.7 dB at 35 GHz, and isolation is better than 32 dB from 30 to 40 GHz. The power-handling capability is at least +38 dBm pulsed and +35 dBm continuous wave. Switching speed rise- and fall times are 2 ns.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A high performance V-band monolithic FET transmit-receive switch
G.L. Lan, Dixie Dunn, J.C. Chen et al. · 2003 · 38 citations
A monolithic high power Ka-band PIN switch
J.V. Bellantoni, D. Bartle, D.N. Payne et al. · 2003 · 23 citations
Ultrafast GaAs microwave PIN diode
R. Tayrani, R.W. Glew · Electronics Letters · 1983 · 11 citations