Building Blocks for n‐Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene‐Modified Polythiophene Semiconductors

Abstract

A new family of perfluoroarene-modified thiophene semiconductors 1–3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2 V−1 s−1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2002/2003/z51253_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.