Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth

Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

Hiroshi Ishikawa · Applied Physics Letters · 1993 · 74 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer

Hiroshi Ishikawa, I. Suemune · IEEE Photonics Technology Letters · 1994 · 55 citations

Engineering, Materials Science, Physics +17

Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

Kazuo Nakajima, T. Kusunoki, Chisato Takenaka · Journal of Crystal Growth · 1991 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +13

Multicomponent zone melting growth of ternary InGaAs bulk crystal

Toshihiko Suzuki, K. Nakajima, T. Kusunoki et al. · Journal of Electronic Materials · 1996 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +12

Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply

T. Kusunoki, Chisato Takenaka, Kazuo Nakajima · Journal of Crystal Growth · 1991 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17