Ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×10 ⁸ cm Hz ^1/2 /W at 10.6μm

Abstract

We have calculated the performance of ambient temperature long wavelength HgCdTe photoconductors as a function of material composition and doping. It has been shown that the figures of merit, both calculated and measured, are several times higher than the ones reported previously. It is concluded that an optimised ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×108cm Hz1/2/W at λ = 10.6 μm.