Temperature dependent exciton photoluminescence of bulk ZnO

Abstract

Temperature dependent (4.2–300 K) photoluminescence (PL) of bulk (0001)-oriented ZnO in the range of free- and bound-exciton emission is presented. Emission from several bound excitons and the free A exciton were observed from the low temperature (20 K) PL spectrum. The temperature dependence of the free-exciton peak position was fit using the Manoogian-Woolley equation and the coefficients obtained show reasonable agreement both with first-principle theoretical calculations and empirical values of the coefficients for other II–VI semiconductors. The strongest bound-exciton line with a width (full width at half maximum) of about 1 meV exhibited a thermal activation energy of approximately 14 meV, consistent with the exciton-defect binding energy. It was not observed at temperatures above 150 K. Additional analysis of this particular bound-exciton peak suggests it dissociates into a free exciton and a neutral-donor-like defect-pair complex with increasing temperature.