High quality relaxed GaAs quantum dots in GaP matrix

Abstract

A system of GaAs self-assembled quantum dots (QDs) embedded in GaP matrix was studied by means of transmission electron microscopy, steady-state, and transient photoluminescence. Unusually, the QDs are fully unstrained but they have no nonradiative centers introduced by dislocations at GaAs/GaP heterostructure. The band alignment in the QDs is shown to be of type I.