Self-assembled Ge nanostructures as field emitters

Abstract

Self-assembled two-dimensional arrays of Ge islands on Si(111)7×7 were grown by depositing Ge on Si(111)7×7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm2 area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability.