Investigation of InGaAs thermophotovoltaic cells under blackbody radiation

Abstract

The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of measurement with theoretical calculation. Efficiencies of 19.1% for the 0.6 eV InGaAs cell and 16.4% for the 0.74 eV InGaAs cell are obtained at the radiation temperature of 1323 K. The notable differences in reverse saturation current density and ideality factors under the blackbody radiation and standard solar spectrum illumination indicate the significant effect of the radiation spectrum on the detailed understanding of devices.