Evaluation of diffusion lengths and surface recombination velocities from electron beam induced current scans

Abstract

A new procedure is described for the determination of the minority-carrier diffusion length and surface recombination velocity from electron beam induced current (EBIC) scans on a semiconductor containing a barrier perpendicular to the surface. The analysis relies on the evaluation of the first moment of two EBIC profiles at different beam energies. An application of the method to literature data is reported.