Intermixing in GaAsSb/GaAs single quantum wells

Abstract

Photoluminescence coupled with repetitive thermal annealing has been used to study the interdiffusion process in a 10 nm GaAs1−xSbx/GaAs single quantum well. The diffusion equations and the Schrödinger equation were solved numerically to obtain the composition profile and the n=1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick’s second law.