Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics

Abstract

This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.