Biexciton-biexciton and exciton-electron scattering in GaAs quantum wells

Abstract

The dynamics of the interacting excitonic states in GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells has been investigated by spatially resolved and time-resolved luminescence spectroscopy. The combination of these techniques allows us to determine the radiative recombination processes generated by inelastic biexciton-biexciton and exciton-electron collisions under high-excitation density. Our experimental results demonstrate that the dynamics of the interacting excitonic states in quantum wells are comparable to those in bulk materials, i.e., the dimensionality of the semiconductor does not have a significant effect on the specific inelastic collision processes.