Publication | Closed Access
Mn dopant on the “domain stabilization” effect of aged BaTiO3 and PbTiO3-based piezoelectrics
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Citations
23
References
2012
Year
Materials ScienceOxygen VacancyEngineeringFerroelectric ApplicationAligned Defect DipolesEasier HoppingApplied PhysicsFerroelectric MaterialsPiezoelectric MaterialsPiezoelectricityMn DopantChemistryPbtio3-based PiezoelectricsPiezoelectric MaterialFunctional Materials
We report that an obvious difference in the “domain stabilization” effect between 1.0 mol. % Mn doped (Ba1−xSrx)TiO3 and (Pb1−xSrx)TiO3 piezoelectrics with a similar c/a ratio and aging treatment, though typically “increased” stabilization effect occurs with the increase of c/a in each system. The three-time larger microscopic defect dipole field Ei in lead-system from P-E measurements suggests the more aligned defect dipoles through kinetically easier hopping of oxygen vacancy originated from local structure rather than the average structure like c/a may be a primary cause of the strong domain stabilization effect. This may help on the hardening functionality improvement of lead-free systems.
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