Publication | Closed Access
The growth characteristics of ion-beam sputtered CoCr films on Ta isolation layers
14
Citations
5
References
1984
Year
Growth CharacteristicsEngineeringPreferred OrientationTa Isolation LayersThin Film Process TechnologyMagnetic MaterialsMagnetismIon ImplantationIon BeamThin Film ProcessingMaterials ScienceCrystalline DefectsPhysicsMicroelectronicsMicrostructureNatural SciencesSurface ScienceApplied PhysicsMaterials CharacterizationX-ray DiffractionThin FilmsCocr GrainsCocr Films
The magnetic properties and the microstructure of ion-beam sputtered Co <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">82</inf> Cr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</inf> films on BCC and HCP crystalline forms of sputtered Ta isolation layers for vertical recording application are compared. The micro-structure of CoCr and Ta were analyzed by x-ray diffraction, SEM and transmission electron microscopy (TEM). The TEM examination of films prepared in cross-section indicates that columnar grain structure and the preferred orientation of the CoCr grains are established very early for the growth on HCP-Ta, while on BCC-Ta, the CoCr grains show more random orientation. The (0002) x-ray half-width for CoCr on HCP and BCC-Ta were 8° and 14°, respectively. These values were consistent with the larger in-plane coercivity found for CoCr on BCC-Ta.
| Year | Citations | |
|---|---|---|
Page 1
Page 1