Spatial correlations of impurity charges in gapless semiconductors

Abstract

A number of anomalous electronic properties of gapless semiconductors (GS) doped with transition metals have been detected during the last decade. The 3d transition elements form resonant states, i.e. states superimposed on the conduction band continuum. Just these iron states with mixed valency and are the reason for all the observed anomalous properties of the GS HgSe:Fe.