Ion-dose-dependent microstructure in amorphous Ge

Abstract

Implantation-induced, microstructural modifications including increased bond length and non-Gaussian static disorder have been measured in amorphous Ge using extended x-ray absorption fine-structure spectroscopy. The evolution of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects.