Experimental confirmation of fundamental functions for a novel Bloch line memory

Abstract

In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.