Japanese Journal of Applied Physics · 2004 · 23 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsThin FilmsOxide SemiconductorsThin Film AnnealingThin Film Electrical PropertiesAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsCritical Current DensityCritical Current PerformanceCurrent DensityPost-deposition AnnealingYttrium Barium Copper Oxide Films
We report a remarkable increase in critical current density ( J c ) by oxygen post-annealing for only a few tens of minutes in ErBa 2 Cu 3 O y films fabricated at two different pulsed-laser-deposition (PLD) temperatures of 720°C and 760°C. The J c of these films were obviously enhanced to more than 1 MA·cm -2 in the annealing temperature range of 350°C–500°C in comparison with those of the as-deposited films (0.3–0.5 MA·cm -2 ). Even in a nonequilibrium process such as the PLD method, the homogenization of oxygen contents in films is crucial for enhancement of the films' critical current properties, which suggests that oxygen post-annealing is a practical process for improvement of critical current of PLD-REBa 2 Cu 3 O y coated conductors.
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