Japanese Journal of Applied Physics · 1985 · 24 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSolid State PhysicsCrystal ChemistryCrystal GrowthDefect ThermodynamicsDefects In Electronic MaterialsDielectricsPhase TransitionsCommensurate TransitionsCommensurate-incommensurate TransitionsCrystal Defects During GrowthDefect Energetics In CrystalsIncommensurate TransitionsPhysical Properties
Most of the physical properties of crystals which belong to the A 2 BX 4 family, are closely connected with the growth method, and also with the thermal and mechanical treatments applied to the samples. It is the case for the dielectric response which shows a large thermal hystresis over a wide temperature range including the commensurate-incommensurate region. 1,2,3) In this paper, we report the results of the dielectric measurements performed on Rb 2 ZnCl 4 and (N(CH 3 ) 4 ) 2 ZnCl 4 crystals (or TMA) 2 ZnCl 4 ) grown by various methods, and propose an interpretation of the different observed behaviours, involving the presence of defects which appear during and after the crystal growth.