Publication | Closed Access
Compositional control in molecular beam epitaxy growth of GaNyAs1−y on GaAs (001) using an Ar/N2 RF plasma
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Citations
20
References
2002
Year
Wide-bandgap SemiconductorAr/n2 Rf PlasmaElectrical EngineeringEngineeringPhysicsApplied PhysicsGan Power DeviceCompositional ControlMolecular Beam Epitaxy
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