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RE (RE = Sm, Eu, Gd)‐doped CeO<sub>2</sub> single buffer layers for coated conductors prepared by chemical solution deposition
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Citations
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References
2009
Year
Materials ScienceCeo 2Chemical EngineeringEngineeringOxide ElectronicsChemical Solution DepositionSurface ScienceApplied PhysicsSemiconductor MaterialAbstract Textured ReThin Film Process TechnologyThin FilmsChemical DepositionCoated ConductorsYbco FilmChemical Vapor DepositionThin Film Processing
Abstract Textured RE (RE = Sm, Eu, Gd)‐doped CeO 2 single buffer layers for coated conductors were prepared by a polymer assisted chemical solution deposition (PACSD) approach. The as‐grown buffer layers on biaxially textured NiW(5%) alloy tapes were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The thicknesses of these buffer layers have been determined to be over 150 nm, on which a YBCO film has been deposited with an onset transition temperature above 90 K and a critical current density of 1 MA cm –2 . These results indicate that RE doping can increase the critical thickness of CeO 2 and PACSD may be a cost‐effective way to deposit CeO 2 . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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