Applied Physics Letters · 1994 · 68 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSuperconducting MaterialsSuperconducting Thin FilmsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCritical Current DensityCurrent DensityJunction Leakage CurrentNbn Thin FilmsSubstrate Temperature EffectsTunnel JunctionsTunneling BarriersTunneling Current
NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5–nm–thick AlN barriers. Even though the NbN/AlN/NbN trilayers are deposited without intentional heating, the junctions show a large gap voltage (Vg=5 mV), sharp quasiparticle current rise (ΔVg=0.16 mV), and small subgap leakage current (Vm=25 mV and Rsg/RN=9). This report shows that high-quality NbN/AlN/NbN tunnel junctions can be made at ambient substrate temperature.
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Tunneling Between Superconductors
Vinay Ambegaokar, A. Baratoff · Physical Review Letters · 1963 · 2.2K citations
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
Hayato Yamashita, K. Fukui, S. Misawa et al. · Journal of Applied Physics · 1979 · 238 citations