Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm−2) - Concepedia

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Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm−2)

10

Citations

21

References

1999

Year

Johannes Amon, J. Härtwig, Wolfgang Ludwig, G. Müller

Journal of Crystal Growth

Materials EngineeringEngineeringDislocation InteractionPhysicsLow Dislocation DensityApplied PhysicsVgf GrowthDefect FormationResidual DislocationsCompound SemiconductorMicrostructure

References

	Year	Citations

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