Short-Period Superlattices of (GaP)_n(AlP)_n Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Short-period superlattices of (GaP) n (AlP) n have been grown by metalorganic vapor phase epitaxy. X-ray diffraction measurements have confirmed the formation of the structures, where n ranges from 4 to 10. Low-temperature photoluminescence has shown characteristic emission peaks, which shift toward higher energies and tend to increase in intensity with decreasing n . These results, together with the band discontinuity between GaP and AlP which was estimated from that between GaP and Al 0.6 Ga 0.4 P, strongly indicate that the (GaP) n (AlP) n system forms the superlattices of a type-II band alignment.