Publication | Closed Access
Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
38
Citations
17
References
2010
Year
Materials ScienceElectrical EngineeringSolid-state LightingEngineeringPhotoluminescenceNanotechnologyApplied PhysicsNew Lighting TechnologyAluminum Gallium NitrideGan Power DeviceNoble Metallic NanoparticlesLight-emitting DiodesEnhanced ElectroluminescenceMnps ProvideLuminescence PropertyOptoelectronicsMetallic NanoparticlesPlasmonic Material
The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes and photon modes internally trapped in a device. To investigate this effect, the peculiarities of the LSPR and the corresponding structural properties of the MNPs are discussed through the effective medium approach.
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