Damage evaluation for ion-implanted garnet layer by Monte Carlo technique

Abstract

A Monte Carlo simulation technique has been developed to investigate damage generation mechanisms in H+ and Ne+ implanted garnet layers. Calculation of ion scattering process and energy loss process reveals that less than 10% of H+ ion collisions with garnet nuclei generate damage, which is caused by relatively small displacement of knocked-on oxygen nuclei in the garnet layer. On the other hand, more than 80% of Ne+ ion collisions with garnet nuclei generate damage, which is mainly caused by not only relatively large displacement of knocked-out oxygen nuclei but by displacement of secondarily knocked-on oxygen nuclei generated by the knocked-out oxygen nuclei. This implies marked differences in magnetic properties between H+ and Ne+ implanted layers.