Publication | Closed Access
On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment
40
Citations
28
References
2014
Year
Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceSemiconductor Device
| Year | Citations | |
|---|---|---|
Page 1
Page 1