Influence of Silicon Doping on the Properties of Sputtered Ge₂Sb₂Te₅ Thin Film

Abstract

Ge2Sb2Te5 is a promising candidate material for next-generation memory devices due to its fast phase-changing characteristics. The power consumption of an electronic device is a key factor in determining the working efficiency of next-generation memory devices. In this study, Si was doped on Ge2Sb2Te5 thin film to reduce the power consumption during device operation. Both the crystal fraction and the electrical properties of the Si-doped Ge2Sb2Te5 film were measured using in situ measurements. The analyses of the crystal structure by X-ray diffraction indicated that the doped Si and the Ge2Sb2Te5 formed a solid solution, where the doped Si occupied the interstitial sites of the Ge2Sb2Te5 crystal. Si doping was shown to elevate the crystallization temperature and enhance the thermal stability of Ge2Sb2Te5.