Annealing effects on Si-doped GaAs grown on high-index planes by molecular-beam epitaxy

Abstract

A photoluminescence study of the effects of annealing on Si-doped (∼1016 cm−3) GaAs grown on (311)A-, (111)A-, (111)B-, and (100)-oriented substrates by molecular-beam epitaxy has been performed. The anneal temperatures were 873, 973, and 1098 K. All the anneals were of 24 h duration. Detailed assessment of the low-temperature photoluminescence spectra suggests that site switching (Si switching from Ga site to As site) only occurs in the n-type samples [(100) and (111)B samples] and not in the p-type ones [(111)A and (311)A samples].