A Doping‐Free Carbon Nanotube CMOS Inverter‐Based Bipolar Diode and Ambipolar Transistor

Abstract

A barrier-free bipolar diode (BFBD) and an ambipolar field-effect transistor (FET) are fabricated based on a doping-free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side-by-side on a single CNT, and can be used as an n-FET, p-FET, CMOS inverter, and high-performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200703210_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.