Highly Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

Abstract

Highly conductive and transparent films of Si-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with SiO 2 or SiO dopant added. Films with resistivity as low as 3.8×10 -4 Ω cm and average transmittance above 85% in the visible region can be produced on low temperture substrates at below 250°C. Great improvement in the stability of the resistivity for use at high temperatures was obtained for Si-doped ZnO films in comparison with undoped films.