Tunable few-electron quantum dots in InAs nanowires

Abstract

Quantum dots realized in InAs are versatile systems to study the effect of\nspin-orbit interaction on the spin coherence, as well as the possibility to\nmanipulate single spins using an electric field. We present transport\nmeasurements on quantum dots realized in InAs nanowires. Lithographically\ndefined top-gates are used to locally deplete the nanowire and to form\ntunneling barriers. By using three gates, we can form either single quantum\ndots, or two quantum dots in series along the nanowire. Measurements of the\nstability diagrams for both cases show that this method is suitable for\nproducing high quality quantum dots in InAs.\n