Publication | Open Access
Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy
83
Citations
10
References
1998
Year
Self-organized Quantum DotsOptical MaterialsEngineeringColloidal NanocrystalsZero-dimensional Excitonic PropertiesCapped QdsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum DotsMolecular Beam EpitaxyCompound SemiconductorMaterials SciencePhotoluminescencePhysicsNanotechnologyOptoelectronic MaterialsNanocrystalline MaterialNanophysicsNanomaterialsCdte QdsApplied Physics
The successful growth of self-organized quantum dots (QDs) of CdTe on ZnTe (100) surface by molecular beam epitaxy is reported. Atomic force microscope measurements on the uncapped samples revealed the formation of CdTe QDs with typical dot diameters of 20±2 nm and heights of 2.7±0.3 nm at 3.5-ML-thick CdTe deposited. The intensity of photoluminescence (PL) from the capped QDs was higher than CdTe/ZnTe single quantum wells (SQWs) by a few orders of magnitude at 4.2 K, and exhibited a thermal quenching with an activation energy of 110 meV, which is about twice as large as those in SQWs. In time-resolved PL measurements, the decay time was almost independent of temperature below 20 K. This is interpreted as due to the zero-dimensional excitonic properties in QDs.
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