Japanese Journal of Applied Physics · 1991 · 22 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin-film DepositionThin-film TransistorsCrystalline SiliconLow-pressure Chemical Vapor DepositionLow-temperature DepositionPhysical PropertiesPolycrystalline Semiconductor FilmsPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsSilicon Thin Films
This paper investigates the role of silane partial pressure ( P SiH 4 ) in VLPCVD on the as-deposited poly-Si film quality. The film quality strongly depends on the P SiH 4 when deposition temperature is kept constant. Higher pressure and excessively lower pressure have been found to be not adequate for thin film transistors (TFTs). By optimizing the deposition conditions, excellent TFTs can be fabricated through a low temperature process without relying on any other special processes. This paper also suggests the possibility of further improvement of as-deposited poly-Si films.
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