Applied Physics Letters · 1990 · 94 citations · 10 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsDislocations In SemiconductorsEpitaxial GrowthIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsCritical ThicknessDislocations In Epitaxial FilmsEpitaxial InterfacesMolecular Beam EpitaxyPhotoluminescenceReflection High-energy Electron DiffractionThickness ControlTransmission Electron Diffraction
The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As opposed to similar studies on III-V and Si-Ge systems, there is no evidence of island formation before relaxation by dislocations at the interface.
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B. Lewis, T. C. Lee, F. J. Grunthaner et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 127 citations