Optimization of Al-doped ZnO Window Layers for Large-Area Cu(InGa)Se₂-Based Modules by RF/DC/DC Multiple Magnetron Sputtering

Abstract

In this report, a comparative study of physical properties of the multilayered ZnO:Al films prepared by a combination of RF and DC magnetron sputtering is presented. It has been found that a RF/DC/DC trilayered system consisting of a thin RF-sputtered ZnO:Al bottom layer with two identical DC-sputtered ZnO:Al layers deposited with a low DC current improved the physical properties when compared to those of the ZnO film of the baseline condition, [DC(2.0 A, thickness of about 6500 Å) monolayer]. The sheet resistance and transmittance of the highest quality ZnO film deposited with the RF(600 Å)/DC(1.2 A, thickness of 4200 Å)/DC(1.2 A, thickness of 4200 Å) sputtering condition were found to be 10 Ω/sq and 85% in the wavelength range of 350–1400 nm, respectively. With the newly improved transparent-conductive-oxide (TCO) window, Cu(InGa)Se 2 (CIGS) modules (aperture area = 50 cm 2 ) have been fabricated, and marked improvement in fill factor (FF) (+8%) and efficiency (+12%) have been obtained when compared to those of the ZnO:Al deposited under the baseline condition. The average efficiency of the above CIGS modules was found to be 11.1%.