Electron Paramagnetic Resonance Knight Shift in Semimagnetic (Diluted Magnetic) Semiconductors

Abstract

The effect of the carrier concentration induced shift of the $g$ factor (the Knight shift) of the ${\mathrm{Mn}}^{2+}$ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for $n$- and for $p$-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier--local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.