Analysis of the interaction of an electron beam with back surface field solar cells

Abstract

In this paper the short circuit current ISC induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the ISC gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron–hole pair generation.