Publication | Closed Access
A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity
140
Citations
24
References
2015
Year
EngineeringResponse SpeedOptoelectronic DevicesInterfacial PassivationGraphene NanomeshesPhotodetectorsGraphene/gaas Near-infrared PhotodetectorNanoelectronicsInfrared OpticPhotonicsElectrical EngineeringPhotoluminescenceHigh SensitivityOptoelectronic MaterialsDevice PerformancePhotoelectric MeasurementSimple Passivation StrategyInfrared SensorApplied PhysicsGrapheneGraphene NanoribbonOptoelectronicsOptical Devices
We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlO<sub>x</sub>passivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.
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