Publication | Closed Access
Electron and Positron Distribution for the Plane (1110) in Si and GaAs
33
Citations
5
References
1989
Year
Charge ExcitationsEngineeringElectronic StructureSemiconductor DeviceElectron PhysicSemiconductorsElectronic DevicesQuantum MaterialsCharge Carrier TransportCompound SemiconductorSemiconductor TechnologyElectron DensityElectrical EngineeringPhysicsUnit CellCharge DensitiesSemiconductor MaterialSolid-state PhysicZincblende SemiconductorsApplied PhysicsCondensed Matter PhysicsPositron Distribution
Abstract The electron and positron charge densities are calculated as a function of position in the unit cell for two diamond and zincblende semiconductors, using wave functions derived from nonlocal pseudopotential band structure calculations for the electronic part, and the positron wave functions are calculated for single‐particle approximation in manner which is free of any theoretical assumptions.
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