Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

Abstract

The resistive switching mechanisms of memory films are proposed to explain why resistive switching characteristics of device are more stable than those of and devices in this study. Different from the and the devices, the carrier conduction mechanisms in the device obey space charge limited current theory, which may be caused by the formation of the interface layer between Ti and . Moreover, the resistive switching mechanisms are proposed to be related to the filament formation/rupture theory and oxygen ion migration. The location where filament formation/rupture takes place should be confined near the interface between Ti and , leading to the stable resistive switching characteristics and a better endurance performance. During successive resistive cycles at room temperature and , the fatigue behaviors are observed due to the degradation of both two memory states, which might be related to the transformation of the interface layers between Ti and and the coalescence of clusters.