Canadian Journal of Physics · 1980 · 20 citations · 0 references
EngineeringTemperature DependenceE GPhotovoltaic EffectPhotovoltaic SystemPhotovoltaicsSemiconductorsThermodynamicsSolidificationSolar Thermal EnergySolar Energy UtilisationMaterials EngineeringMaterials ScienceElectrical EngineeringParent Binary CompoundsSemiconductor MaterialHigh Temperature MaterialsApplied PhysicsAlloy DesignAlloy PhaseEnergy Conversion MaterialsEnergy GapSolar Cell Materials
The temperature dependence of the direct energy gap E g in the In 1−x Ga x Sb alloy system has been measured from 6 to 300 K using the photovoltaic effect as a tool of study. The temperature coefficients of E g in the alloy were related in a simple way to those of the parent binary compounds. It is shown in particular that the bowing parameter in the E g (x) equation varied very little between 6 and 300 K.