Applied Physics Letters · 2002 · 18 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectronic MaterialsThin FilmsDielectric MaterialsDielectric PropertiesDielectricsIon ImplantationThin Film Electrical PropertiesThin-film MaterialsCeramic DielectricsDielectric Loss MechanismsIon Implantation EffectsLoss TangentLow-loss Dielectric MaterialsPermittivityResidual Stress Induced DistortionThin-film Dielectrics
The dielectric response has been studied in 10-μm-thick, single-crystal potassium tantalate films formed by crystal ion slicing. Scanning microwave microscopy shows that the implanted, pre-etched samples exhibit a bulk-like permittivity and low-loss tangent (0.0009) at 1.7 GHz. The separated free-standing films have somewhat higher loss tangents due to residual-ion-induced stress. Selective relaxation of this stress by etching or annealing reduces the dielectric loss.
11
Intrinsic dielectric loss in crystals
V. L. Gurevich, A. K. Tagantsev · Advances In Physics · 1991 · 401 citations · Full text