Spatially extended nature of resistive switching in perovskite oxide thin films

Abstract

The authors report the direct observation of the electric pulse induced resistance-change effect at the nanoscale on La1−xSrxMnO3 thin films by the current measurement of the atomic force microscopy (AFM) technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short-pulse-voltage switching conditions. It is important for future nanoscale nonvolatile memory device applications.