Japanese Journal of Applied Physics · 1980 · 49 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthLaser DiodesLaser PhysicsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersHeterostructure DevicesHeterostructure LasersLow-threshold Current LasersOptical Gain MaterialsSemiconductor Laser DiodesSolid-state Lasers
The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far reported on the InP/GaInAsP laser in 1.5 µm wavelength region.
6
Ultimate low-loss single-mode fibre at 1.55 μm
T. Miya, Y. Terunuma, T. Hosaka et al. · Electronics Letters · 1979 · 633 citations