Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

Abstract

We studied the switching dynamics of a ferroelectric-gate thin-film transistor (FeTFT) consisting entirely of oxide-based thin films: SrRuO3 (SRO: bottom-gate electrode), Pb(Zr,Ti)O3 (PZT: ferroelectric), and ZnO (semiconductor). We switched the FeTFT channel conductance by applying short pulses to the gate electrode. We found that the switching of a FeTFT was caused by the domain wall motion in a ferroelectric film. The polarization reversal starts from the region located under the source and drain electrodes and travels along the channel length direction. In addition, the domain wall velocity increases as the domain wall gets closer to the source and drain electrodes in a ferroelectric film. Therefore, a FeTFT has the scaling merit of fast operation speed.