Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

Abstract

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MVcm(-1) of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (C) 2012 The Japan Society of Applied Physics