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Thermal Expansion Coefficient of Boron Monophosphide
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1976
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EngineeringCrystal Growth TechnologyBoropheneSemiconductorsBoron NitrideTempeature RangeThermodynamicsEpitaxial GrowthMaterials SciencePhysicsCrystalline DefectsSemiconductor MaterialCoefficient α VariesHeat TransferThermal Expansion CoefficientApplied PhysicsCondensed Matter PhysicsThin FilmsThermal EngineeringThermal Expansion
Thermal expansion of BP epitaxially-grown on Si{111} and Si{100} substrates has been investigated by using a high-temperature X-ray diffractometer. The coefficient α varies from (4.0±0.3)×10-6 to (6.2±0.3)×10-6 K-1 in the tempeature range of 400–800 K. The unit-cell dimension of BP on Si{111} is about 0.1 % larger than that of BP on Si{100}.